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| STP11NM80 - STF11NM80 STB11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 - 11 A TO-220 /FP/D2PAK/TO-247 MDmeshTM MOSFET Table 1: General Features TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80 Figure 1: Package RDS(on)*Qg 14 nC 14 nC 14 nC 14 nC ID 11 A 11 A 11 A 11 A VDSS 800 800 800 800 V V V V RDS(on) < < < < 0.40 0.40 0.40 0.40 3 1 2 1 2 3 TYPICAL R DS(on) = 0.35 LOW GATE INPUT RESISTANCE LOW INPUT CAPACITANCE AND GATE CHARGE BEST RDS(on)*Qg IN THE INDUSTRY TO-220 TO-220FP 3 1 2 1 3 DESCRIPTION The MDmeshTM associates the Multiple Drain process with the Company's PowerMeshTM horizontal layout assuring an oustanding low on-resistance. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. D2PAK TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The 800 V MDmeshTM family is very suitable for single switch applications in particular for Flyback and Forward converter topologies and for ignition circuits in the field of lighting. Table 2: Order Codes SALES TYPE STP11NM80 STF11NM80 STB11NM80T4 STW11NM80 MARKING P11NM80 F11NM80 B11NM80 W11NM80 PACKAGE TO-220 TO-220FP D2PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE Rev. 2 October 2005 1/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Table 3: Absolute Maximum ratings Symbol Parameter TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Operating Junction Temperature Storage Temperature 11 4.7 44 150 1.2 -65 to 150 800 800 30 11 (*) 4.7 (*) 44 (*) 35 0.28 Value TO-220/D2PAK TO-220FP V V V A A A W W /C C Unit ( ) Pulse width limited by safe operating area (*) Limited only by the Maximum Temperature Allowed Table 4: Thermal Data TO-220/D2PAK TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.83 62.5 300 TO-220FP 3.6 Unit C/W C/W C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = 2.5A, VDD = 50 V) Max Value 2.5 400 Unit A mJ 2/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250 A VGS = 10V, ID =5.5 A 3 4 0.35 Min. 800 10 100 100 5 0.40 Typ. Max. Unit V A A nA V Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS > ID(on) x RDS(on)max, ID = 7.5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 8 1630 750 30 2.7 Max. Unit S pF pF pF f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain VDD = 400 V, ID = 5.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 4) VDD = 640 V, ID = 11 A, VGS = 10V td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 22 17 46 15 43.6 11.6 21 ns ns ns ns nC nC nC Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, VGS = 0 ISD = 11 A, di/dt = 100 A/s VDD = 50 V, Tj = 25C (see test circuit, Figure 5) ISD = 11 A, di/dt = 100 A/s VDD = 50 V, Tj = 150C (see test circuit, Figure 5) 612 7.22 23.6 970 11.25 23.2 Test Conditions Min. Typ. Max. 11 44 0.86 Unit A A V ns C A ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 3: Safe Operating Area For D2PAK/ TO-247 / TO-220 Figure 6: Safe Operating Area For TO-220FP Figure 4: Thermal Impedance For D2PAK/ TO-247 / TO-220 Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Output Characteristics 4/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 9: Transfer Characteristics Figure 12: Normalized Gate Threshold Voltage vs Temperature Figure 10: Transconductance Figure 13: Static Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 15: Normalized On Resistance vs Temperature Figure 17: Normalized BVDSS vs Temperature Figure 16: Source-Drain Forward Characteristics 6/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 8/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 9/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-263 (D 2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b2 c c2 D D1 E e H L L1 L2 L4 V2 13.10 1.30 1.15 1.27 2.70 0 4.32 0.00 0.71 1.15 0.46 1.22 8.89 8.01 10.04 2.54 13.70 1.70 1.39 1.77 3.10 8 0.515 0.051 0.045 0.050 0.106 0 10.28 9.02 TYP MAX. 4.57 0.25 0.91 1.40 0.61 1.40 9.40 MIN. 0.178 0.00 0.028 0.045 0.018 0.048 0.350 0.315 0.395 0.010 0.540 0.067 0.054 0.069 0.122 8 0.404 0.355 TYP. MAX. 0.180 0.009 0.350 0.055 0.024 0.055 0.370 inch 10/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 11/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 23: Revision History Date 29-Jul-2004 20-Oct-2005 Revision 1 2 Description of Changes Final Document Modified value on Figure 17 13/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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